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中文摘要：
利用化学气相沉淀法（CVD）以Ga2O3和NH3为原料在沉积有乙酸镍的硅衬底上合成出了GaN纳米棒,纳米棒直径在50-200nm，长度在2-10μm，表面比较光滑,利用场发射扫描电镜（FESEM），X射线衍射仪（XRD），能量散射谱（EDS）对样品进行了成分和结构分析，表明GaN纳米棒是单晶的纤锌矿结构，同时对其生长机理进行了探讨。
英文摘要：
GaN rods were synthesized on Si substrate coating with Ni（Ac）2 through chemical vapor deposition, employing Ga2O3 and NH3 as Ga and N resources respectively. The diameter of GaN rods range from fifty nanometers to two hundred nanometers. The length of GaN is from two micrometres to ten micrometres, and the surface is smooth. The sample was tested and characterized by employing FESEM, XRD and EDS.It is indicated the sample is composed of GaN rods which belong to single crystal hexagon wurtzite structure. The growth mechanism of GaN rods is discussed.
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