研究了具有不同温度和不同化学势的两个热库中电子通过一个双势垒InAs/InP纳米线异质结进行的传输.利用传输矩阵法得到了电子的传输概率,进而计算得到电子传输所产生的热流.通过数值计算给出了热电子制冷机的性能特征曲线.进一步分析了势垒宽度和势阱宽度对制冷机工作性能的影响.研究发现,当势阱宽度一定时,随着势垒宽度变大共振中心能级的位置变大,共振能级宽度变小,同一偏压对应的制冷率变小,相对制冷系数变大.当势垒宽度一定时,随着势阱宽度变大,同一偏压对应的相对制冷系数变小.当势垒和势阱宽度同时变化时,得到的曲线与势垒宽度一定势阱宽度变化时得到的曲线基本相似.这表明制冷率和相对制冷系数主要受势阱宽度变化的影响.
In this paper,the electron transport through a double-barrier InAs /InP nanowire heterostructure between two reservoirs at different temperatures and chemical potentials is studied. The transport probability of electron is obtained by using transfer matrix method,and the heat flow carried by the electrons transfer is derived. The performance characteristic curves of the refrigerator are plotted by numerical calculation. The influence of the barrier width and well width on the operation performance of the refrigerator is analyzed. It is found that when the well width is fixed,the position of resonance energy level increases while the width of resonance energy level decreases as the barrier width increases,and for the same bias the larger the barrier width,the smaller the cooling rate,while the larger the relative coefficient of performance. When the barrier width is fixed,for the same bias,the relative coefficient of performance will decrease as the well width increases. The curve obtained when both the well width and barrier width vary,is similar to the curve obtained when the well width varies and barrier width is fixed. Thus we can see that cooling rate and the relative cooling factor are mainly affected by the well width.