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Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system
  • ISSN号：0021-4922
  • 期刊名称：Japanese Journal of Applied Physics
  • 时间：2015.1
  • 页码：015505-1-015505-5
  • 相关项目：常关型宽禁带氮化镓MOS场效应晶体管的研究
作者： Yue Zhen|Zhisheng Wu|Baijun Zhang|Yang Liu|
同期刊论文项目
常关型宽禁带氮化镓MOS场效应晶体管的研究
期刊论文 31 专利 7
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