欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
本文采用热压法制备了一种性能优良的Al-50Si合金电子封装材料。通过比较不同烧结工艺下烧结体的密度，获得了制备该合金的最佳烧结工艺：低温（460℃）压制压力100MPa、烧结温度800℃、烧结时间2h，热等静压工艺参数：温度540℃、压力200MPa，保温保压4h。对在最佳烧结工艺条件下，经过热等静压处理后的材料进行了性能表征，具体性能：相对密度达到999／6，抗弯强度223MPa，硬度153HB，热膨胀系数在0～200℃达到9．3×10^-6／K，热导率达到142w／（m·K）。
英文摘要：
High-quality A1-50Si alloy electronic packaging materials were prepared by a hotpressing route. By comparison of the sintered density, the optimal sintering process is obtained： pressure of 100 MPa,the sintering temperature of 800℃, and the sintering time of 2 hours and HIP process is temperature of 540℃, pressure of 180 MPa and the time of 4 hours. Meanwhile, the properties of the material prepared under the optimal sintering process are relative density of 99%, bending strength of 223 MPa, hardness of 153 HB, and thermal expansion coefficient of 9.3×10^-6/K-1 in 0 - 200 ℃, the thermal conductivity of 142 W/（m · K）. It indicates that A1-50Si alloy is a good candidate for electronic packaging materials.
同期刊论文项目
同项目期刊论文
Green chemical approaches to ZnSe quantum dots: preparation, characterisation and formation mechanis
High-performance CdS:P nanoribbon field-effect transistors constructed with high-kappa dielectric an
Thermoelectric properties of rapid hot pressed polycrystalline Ag1-xPb18SbTe20 synthesized from dopi
Field Effect Properties of Phosphorus Doped CdS Single-Crystal Nanoribbon via Co-Thermal-Evaporation
Synthesis and spectrum stability of high quality CdTe quantum dots capped with stearate groups in N-
Magnificent CdS three-dimensional nanostructure arrays: the synthesis of a novel nanostructure famil
Composition-controllable synthesis and optical properties of non-integral stoichiometry compound Znx
Concentration and temperature dependences of YBO3 : Bi3+ luminescence under vacuum ultraviolet excit
Temperature dependence of optical properties and size tunability CdSe quantum dots via non-TOP synth
Synthesis of CdSXSe1-X nanoribbons with uniform and controllable compositions via sulfurization: Opt
Photoluminescence properties of Eu3+ and Bi3+ in YBO3 host under vacuum ultraviolet/ultraviolet exci
Thermoelectric properties of rapid hot-pressing N-type (Bi2Te3)0.9 (AgxBi2-xSe3)0.1 synthesized from
Self-ignition route to thermoelectric oxides of Na-doped Ca3Co4O9 and their thermoelectric propertie
期刊信息
位置：