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Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires
  • ISSN号：1936-0851
  • 期刊名称：ACS Nano
  • 时间：2014.4
  • 页码：3412-3420
  • 相关项目：超强度原子薄膜弹性应变工程的理论和计算探索
作者： Guo, Wanlin|Liao, Zhi-Min|Deveaud, Benoit|Yu, Dapeng|
同期刊论文项目
超强度原子薄膜弹性应变工程的理论和计算探索
期刊论文 34
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