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Single ferromagnetic layer magnetic random access memory
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2013.8.28
  • 页码：-
  • 相关项目：高自旋极化率钴基全Heusler合金薄膜材料的低温有序化转变研究
作者： Xing, M. -J.|Jalil, M. B. A.|Tan, Seng Ghee|Jiang, Y.|
同期刊论文项目
高自旋极化率钴基全Heusler合金薄膜材料的低温有序化转变研究
期刊论文 48
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