报道了一种新颖而有效的二步制备氮化镓粉末的方法.以乙氧基镓Ga(OC2H5)3作前驱体,利用溶胶-凝胶法和高温氨化法相结合,在950℃氨化温度下,将凝胶与流动的NH3反应20 min,合成了GaN粉末.XRD、FTIR、TEM及SAED的测量结果表明,GaN粉末是六方纤锌矿结构的单晶晶粒,粉末粒度较均匀,FTIR吸收谱有明显的宽化现象.
A novel and efficient method was applied to prepare gallium nitride(GaN) powder. Hexagonal gallium nitride(GaN) powder was successfully synthesized by means of a combination of sol-gel process with high temperature ammoniation using Ga(OC2H5)3 as a precursor. Ammoniation of Ga2O3 gel was conducted in the flow of NH3 gas at 950 ℃ for 20 min. Measurement results by XRD, FTIR, TEM, and SAED indicate that the synthesised GaN is of a singlephase hexagonal wurtzite structure, and the granularity of the GaN powder has a good uniformity. In addtion, the FTIR shows a distinct peak broadening.