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中文摘要：
采用氧化铟锡（ITO）合金材料作为靶材，通过射频磁控溅射制备ITO膜。将获得的ITO膜应用于结构为ITO／m-MTDATA（30nm）／NPB（20nm）／Alq3（50nm）LiF（0．8nm）／Al（100nm）的有机电致发光器件（OLED），得到了最大亮度为11560cd／m^2（电压为25V）、最大效率为2．52cd／A（电压为14V）的结果。为了获得双面发光，制作了结构为ITO／m-MTDATA（30nm）／NPB（20nm）／Alq3（50nm）LiF（0．8nm）／Al（20nm）／ITO（50nm）的器件，其阳极出光的最大亮度为14460cd／m^2（电压为18V）、最大效率为2．16cd／A（电压为12V），阴极出光的最大亮度为1263cd／me（电压为19V）、最大效率为0．26cd／A（电压为16V）。
英文摘要：
A method to generate double-side light-output organic light emitting devices（OLEDs） using oxygen-free sputtering target by R. F. magnetron reactive sputtering system has been presented. It is demonstrated that the method leads to a promising result in the fabrication of OLED. When the OLED structure is ITO （using oxygen-free sputtering target）/m-MTDATA （30 nm）/NPB（20 nm）/Alqa （50 nm）LiF（0.8 nm）/Al（100 nm） ,the maximum brightness and efficiency achieve 11560 cd/m^2 （V=25 V） ,and 2. 52 cd/A（V= 14 V） ,respectively. In the double-side light-output OLED,whose structure is ITO （commerdal production）/m-MTDATA （30 nm）/NPB（20 nm）/Alq3 （50 um）LiF（0.8 um）/Al（20 nm）/ITO（50 um） （using oxygen-free sputtering target）. The maximum brightness and efficiency measued from anode side attain 14 460 cd/m^2 （V= 18 V） and 2.16 cd/A（V= 12 V）, respectively, and these measured from cathode side are 1263 cd/m^2 （V= 19 V） ,0. 26 cd/A（V= 16 V）.
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