中文摘要：

宽带隙半导体GaN材料在光电子等方面有重要应用，采用Li3N号Ca同时作为助熔剂的熔盐法，可在温和条件下生长毫米级的GaN块单晶。为避免助熔剂之间发生副反应，通过研究不同条件下Li3N与Ca的反应，应用X射线衍射分析技术对产物进行物相鉴定，探讨反应机理并归纳出生成LiCaN型的影响因素，从而为GaN生长提供指导。

英文摘要：

A wide direct band gap semiconductor, GaN is currently considered as the most promising optoelectronic materials. A flux method using Li3N and Ga has successfully obtained GaN crystals in size of several millimeters under moderate conditions. In order to avoid the formation of by--product from the fluxes, the reactions of Li3N and Ca were studied, and then the products were determined by X ray diffraction analysis. The mechanism of the reactions and the impact factors were concluded.