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Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power
  • ISSN号：1359-6462
  • 期刊名称：SCRIPTA MATERIALIA
  • 时间：2011.8.8
  • 页码：327-330
  • 相关项目：Si基新型相变材料（Si-Sb-Te）及其器件基础研究
作者： Chu, Junhao|Wu, Liangcai|Rao, Feng|Song, Zhitang|Zhou, Xilin|Zhu, Min|Liu, Bo|Yao, Dongning|Feng, Songlin|
同期刊论文项目
Si基新型相变材料（Si-Sb-Te）及其器件基础研究
期刊论文 39
同项目期刊论文
Phase Change Characteristics of SiO2 Doped Sb2Te3 Materials for Phase Change Memory Application
Sb-rich Si-Sb-Te Phase-Change Material for Phase-Change Random Access Memory Applications
N-doped Sb2Te phase change materials for higher data retention
Study on the crystallization behaviors of Si2Sb2Tex materials
Study on TiO2-doped Ge2Te3 films for phase-change memory application
Study on the impact of the initialization process on the phase change memory
Investigation of Al doping on Ge55Te45 for phase change memory application
Advantages of GeTeN material for phase change memory applications
Scaling properties of phase-change line memory
Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
Al1.3Sb3Te material for phase change memory application
Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si-Sb-Te films for phase-c
Phase transition characteristics of Al-Sb phase change materials for phase change memory application
Ga-Sb-Se material for low-power phase change memory
Superlattice-like electrode for low-power phase-change random access memory
Study on Interface Adhesion between Phase Change Material Film and SiO2 Layer by Nanoscratch Test
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
基于0．13μm工艺的8Mb相变存储器
一种具有掉电数据保持功能的触发器设计
基于相变存储器器件单元的电流脉冲测试系统
Ge_2Sb_2Te_5的化学机械抛光研究进展
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
基于PCRAM数据页聚簇的缓冲算法
基于二极管单元的高密度掩模ROM设计
Direct observation of metastable face-centered cubic Sb2Te3 crystal
一种滞环恒流LED驱动电路的电流采样电路
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
大电流负载的片上LDO系统设计