中文摘要：

利用有效质量近似和变分原理，对直接带隙Ge／Si1-xGex量子阱中激子态和带间光跃迁进行研究．结果表明：直接带隙Ge／Si1-xGex量子阱中带间光跃迁能、激子复合时间和基态振子强度依赖于阱宽和Si1-xGe中Ge含量．当阱宽大于30nm时，跃迁能、激子复合时间、振子强度对Ge含量和阱宽的变化不敏感；基态线性光极化率随着Ge含量的增加而减小，同时光极化率峰值所对应的光子能量减小．

英文摘要：

Based on the framework of effective-mass approximation and variational approach, the ground-state exciton and interband transition in the direct-gap Ge/Si1-x Gex quantum well are investigated. Numerical results show that the interband transition energy, recombination time of exciton and oscillator strength can be tuned effectively by well width and Ge content in the direct-gap Ge/Sil ~Gex quantum well, when well width is more than 30 nm, the interband transition energy, exciton re- combination of time and oscillator strength is insensitive for well width and Ge content in the Si1-xGex barrier layer. The imagi- nary part of the ground state linear light polarization decreases with the increase of Ge content in the Si1-x Gex barrier layer, while the photon energy corresponds to the summit of the optical polarizability reduces.