位置：成果数据库 > 期刊 > 期刊详情页
Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：3-7
  • 语言：英文
  • 相关项目：半导体材料特性的光学检测技术研究
作者： Zhang, Xiren|Li, Bincheng|Liu, Xianming|
同期刊论文项目
半导体材料特性的光学检测技术研究
期刊论文 11 会议论文 8 专利 3
同项目期刊论文
Measurement of electronic transport property of semiconductors by three-dimensional modulated free c
Sensitivity analysis of laterally resolved free carrier absorption determination of electronic trans
Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafer
Analysis of free carrier absorption measurement of electronic transport properties of silicon wafers
Accuracy analysis for the determination of electronic transport properties of Si wafers using modula
离子注入硅片快速退火后的红外椭偏光谱研究
Modulated free carrier absorption characterization of semiconductor wafers by frequency scans at dif
IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon w
半导体特性的调制自由载流子吸收变距频率扫描方法研究
调制自由载流子吸收测量半导体载流子输运参数的三维理论