中文摘要：

采用氟化钨（WF6）和甲烷为前驱体气体，以氩气为载气，在氢气氛下，采用等离子体增强化学气相沉积（PECVD）方法在低温下制备具有纳米结构的碳化钨薄膜。采用SEM、AFM、XRD、EDS等方法表征了碳化钨薄膜的形貌、晶体结构和化学组成，表明基体温度在450℃，甲烷与氟化钨气体流量比为10时得到的碳化钨薄膜是以直径为Ф40～80nm，高度为150～200nm的圆柱状的纳米晶粒聚合体组成。探讨了低温制备纳米结构碳化钨薄膜的机理，分析了基体温度对薄膜物相和微观结构的影响。

英文摘要：

Nanostructure tungsten carbide thin films were deposited by low temperature plasma enhanced chemical vapour deposition （PECVD） from a WF6/CH4/H2/Ar mixture on nickel substrates. The phase composition of the deposited films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscope （AFM） and energy-dispersive spectrometer （EDS）. The results show that the tungsten carbide thin film deposited at 450℃ consists of the nanostructured clusters with the column size of 40 ～ 80nm diameter and 150 ～ 200nm height. Finally,the growth mechanism of PECVD nanostructured tungsten carbide thin films on the nickel substrate and the effect of temperature were also discussed.