利用变角度磁输运方法研究了高迁移率、高浓度、宽度为20nm、单边6掺杂的In0.53Ga0.47As/In0.52Al0.48As量子阱,根据量子阱平面与磁场不同夹角时SdH振荡的拍频节点移动,提取了其自旋分裂能△0和有效g因子|g*|,发现△0随浓度增加而增大,|g*|随浓度增加而减小.进一步的分析和计算表明,|g*|减小是由量子阱能带结构的非抛物性作用引起的.
The zero-field spin splitting and Zeeman splitting in the In0.53Ga0.47As/In0.52Al0.48As quantum well (QW) were extracted by a Shubnikov-de Haas oscillations (SdH) beating pattern analysis under different tilt angles between QW plane and external magnetic field. It is found that the zero-field spin splitting △0 increases with increasing carrier concen- tration while the effective g-factor |g*| decreases. The further calculation indicated that the decrease of |g*| with con- centration is ascribed to the nonparabolic effect of the band structure.