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傅里叶磁光谱仪中的起偏器和检偏
  • 期刊名称：中国激光，32，663（2005）
  • 时间：0
  • 相关项目：室温铁磁半导体材料及其器件应用
作者： 刘质斌，丁剑平，籍建葶，张荣，
同期刊论文项目
室温铁磁半导体材料及其器件应用
期刊论文 389 会议论文 158 著作 16
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InN纳米线材料的特性和制备技术;
Investigation of dislocations
Designing two-dimensional elec
Two-dimensional electron gas d
Ga1-xMnxSb grown on GaSb subst
Research on the Mn-implanted G
离子束淀积方法制备GdSi2薄膜
As-doped p-type ZnO films by s
AlN nanorings
Controllable Assembly of Align
InN纳米线材料的特性和制备技术
AlGaN/GaN分布布拉格反射镜的MOC
Tunable Andreev reflection in
Magnetoresistance oscillations
Study on the growth, modificat
Photocurrent properties of hig
Strong quantum confinement and
Ohmic contact and interfacial
P-type Zn1-xMgxO films with Sb
低能离子束方法制备Fe组分渐变的
Effect of surface treatments o
GaN纳米线材料的特性和制备技术
Growth and properties of magne
Study on the AlN/Si(111) inter
Growth and photocurrent proper
MOCVD生长InxGa1-xN薄膜的表征
Low-frequency excess noise cha
Investigation of Mn-implanted
Transport properties of two-di
退火温度对纳米ZnO薄膜结构与发
Mn注入n型Ge单晶的特性研究.
Effect of the oxygen concentra
MOCVD生长InxGa1-xN薄膜的表征;
The growth temperature depende
Structural properties of GaN1-
InN薄膜的退火特性
Structure and residual stress
The temperature dependence of
FexSi Grown with mass-analysed
Fabrication of GdSi2 film by l
Studies on the heterostructure
Preparation GaxMn1-xN DMS mate
The growth of GaN films on Si
Ferromagnetism of Ni-doped ZnO
Influence of vapor transport e
Subbands transport of the two-
Thermal annealing of InN films
Experimental Evidence of an Oc
Characterization of GaN1-xPx a
Analysis of local structures a
A spin injector
GaN氢化物气相外延生长系统的设
Spin Current due to Spinlike A
The solubility of phosphorus i
Comment on "Radiative and nonr
Investigation into the energy
GaN1-xPx ternary alloys with h
Synthesis of ZnAl2O4/alpha-Al2
Raman studies of phosphorus in
Investigation of Mn-doped Si f
Study of structures and magnet
Synthesis of zinc aluminate sp
Conservation of spin current:
Molybdenum trioxide nanostruct
Study of dry oxidation of alum
A novel InxGa1-xN/InN heterost
Study on strain and piezoelect
Structural and magnetic proper
低能离子束技术制备重掺杂铁的硅
Magnetic properties of Mn-impl
在MOCVD系统中用预淀积In纳米点
光学泵作用下两个耦合量子点的输
Liquid-phase-epitaxy-grown InA
Negative electrochemical capac
High-temperature transport pro
In2O3纳米线制备及其特性
Theoretical study of improved
Investigation of the crystal t
Quantum and transport scatteri
Study of structure and magneti
GaN growth with low-temperatur
Fabrication and properties of
Phase-separation suppression i
Miscibility calculation of GaN
Dielectric properties of AlN f
Multisubband transport of the
Zinc oxide microtubes prepared
InN薄膜的氧化特性研究
用于紫外探测器DBR结构的高质量AlGaN材料MOCVD生长及其特性研究
Ni掺杂ZnO基稀磁半导体的性质
由纳米棒和纳米叶组成的铁磁性的MnSb薄膜