中文摘要：

采用超低压（22×10^2Pa）选择区域生长（selective area growth，SAG）金属有机化学气相沉积（metal-organic chemical vapor deposition。MOCVD）技术成功制备了应变型InGaAsP／InGaAsP电吸收调制器（electroabsorption modulator，EAM）与分布反馈激光器（distribute feedback laser，DFB）单片集成光源的新型光电器件．实验结果表明。采用该技术制备的集成器件表现出了良好的性能：激射阈值为19mA。出光功率接近7mw，边模抑制比（side-mode suppression ratio，SMSR）大于柏dB。将该集成器件出射光耦合进普通单模光纤后进行测量，获得了16dR的消光比，器件3dB响应带宽达到了10GHz以上．将该集成器件完全封装后成功进行了10Gb／s非归零码（non-return zero。NRZ）的传输实验：在误码率为10^-16。的传输条件下于普通单模光纤中传输了53．3km，色散代价小于1．5dB，动态消光比大于8dB，且眼图清晰张开．

英文摘要：

In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated with DFB laser is fabricated by ultra-low-pressure （22 × 10^2 Pa） selective area growth （SAG） MOCVD technique. Superior device performances have been obtained, such as low threshold current of 19 mA, output light power of about 7 mW, and over 16 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3 dB bandwidth in EAM part is developed with a driving voltage of 3 V. After the chip is packaged into a 7-pin butterfly compact module, 10-Gb/s NRZ transmission experiments are successfully performed in standard fiber. A clearly-open eye diagram is achieved in the module output with over 8.3 dB dynamic extinction ratio. Power penalty less than 1.5 dB has been obtained after transmission through 53.3 km of standard fiber, which demonstrates that high-speed, low chirp EAM/DFB integrated light source can be obtained by ultra-low-pressure （22 × 10^2Pa） SAG method.