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中文摘要：
研究了O2/C4F8等离子体刻蚀SiCOH低k薄膜时O2流量对刻蚀率、表面结构的影响,及其放电等离子体特性的关联.发现O2流量的增大可以极大地提高多孔SiCOH薄膜的刻蚀速率,降低表面的粗糙度,减少SiCOH薄膜表面的C：F沉积.等离子体特性的光谱分析表明,O2的添加,增强了C与O之间的反应,从而在Si、F反应刻蚀Si的同时,C、O之间的反应使C消耗,实现Si、C的同步刻蚀,从而获得SiCOH低k薄膜的高刻蚀率和低粗糙度表面.
英文摘要：
The effect of O2 flow rate on etching characteristics of SiCOH low dielectric constant（low-k） films in the O2/C4F8 60MHz/2MHz dual-frequency capacitively couple plasma（CCP） was investigated.By the surface analysis on post-etched SiCOH low-k films and the optical diagnostic on discharge plasma,the increase of O2 flow rate is found to increase the etching rate of SiCOH films,to reduce the surface roughness and to eliminate the C：F deposition on the SiCOH films,due to the increase of reaction between C and O.
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