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High-mobility thin film transistors with neodymium-substituted indium oxide active layer
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2015.9.14
  • 页码：-
  • 相关项目：金属氧化物薄膜晶体管稳定性机理的研究
作者： Gao, Peixiong|Wang, Lei|Ning, Honglong|Peng, Junbiao|
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金属氧化物薄膜晶体管稳定性机理的研究
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