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中文摘要：
本文采用非晶态配合物法及浸渍提拉法在导电玻璃基底上制备了Bi2MoO6薄膜电极,采用此电极在可见光(λ>420 nm)照射下进行了光电催化氧化处理氰化物的研究.通过场发射扫描电子显微镜和X射线衍射对电极的晶体结构进行了表征,发现导电玻璃基底上充分而平均地覆盖着黄色的纳米Bi2MoO6颗粒,形成了γ-Bi2MoO6相.在Bi2MoO6电极处理络合态氰化物Cu(CN)2-3实验中,总氰化物的去除率和Cu的回收率大致是随着电压的升高而增大,当电压为2.0 V,反应时间为120 min时,处理效果最好,剩余总氰化物和Cu的含量分别为30%和35%.破络合后的Cu2+一部分以Cu(Ⅱ)形式沉积在阳极上,一部分转化为Cu单质沉积在阴极上.在Bi2MoO6电极处理自由态氰化物NaCN实验中,总氰化物的去除率大致也是随着电压的升高而增大,当电压为2.0 V,反应时间为120 min时,剩余总氰化物含量为5%.
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