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中文摘要：
金属中自旋翻转散射长度远长于电子平均自由程，近来关于自旋翻转散射效应的研究主要集中于扩散区域．文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法．这种方法可以从磁电输运性质的测量，得出中间隔离层中的自旋翻转散射效应的温度和偏压关系，进一步可以得出诸如电子平均自由程和自旋翻转散射长度等自旋散射信息，以及中间层的态密度和量子阱信息．
英文摘要：
Because the spin - flip length is longer than the electron mean - free - path in a metal, past studies of spin- flip scattering were limited to the diffusive regime. We have developed a method that uses a magnetic double barrier tunnel junction to study spin flip scattering in nanometer sized spacer layers near the ballistic limit. We extract the voltage and temperature dependence of the spin - flip conductance Gs in the spacer layer from magnetoresistance measurements. In addition to spin scattering information, and the spin - flip length （1.0-2.6μm） at 4.2K, this technique also such as the mean - free - path （70nm） yields information on the density of states and quantum well resonance in the spacer layer.
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