以In掺杂CdS量子点太阳能电池为例,讨论了SILAR次数对In掺杂CdS量子点敏化太阳能电池性能的影响。通过SEM、EDS、IPCE、紫外吸收光谱、J-V曲线、EIS等实验测试结果表明,当In 掺杂CdS的摩尔比固定在1:5时,随着SILAR 次数的增加,电池的短路电流密度、开路电压和光电转换效率都随着增加,当SILAR次数为6次时,In掺杂CdS的QDSCs光电转化效率达到了最大值(η=0.76%)。随着SILAR次数的继续增加,其光电转换效率将会下降。
Taking In-doped-CdS quantum dot solar cell (QDSCs) for example, the effects of SILAR cycles on In-doped-CdS QDSCs were discussed. With these characterization results of SEM,EDS,IPCE,UV-Vis absorption spectroscopy,J-V curnes and EIS, finally it is concluded that when In-doped-CdS molar ratio is fixed at 1:5, the short circuit current density,open circuit voltage and photoelectric conversion efficiency of the In-doped-CdS QDSCs increase accordingly with SILAR cycles. When the SILAR cycles reaches 6, the photoelectric conversion efficiency of In-dope-CdS QDSCs gets the maximum value (η=0.76%). When the SILAR cycles increase gradually, photoelectric conversion efficiency of solar cell decreases.