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Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique
  • ISSN号：1882-0778
  • 期刊名称：Applied Physics Express
  • 时间：2014.1
  • 页码：016502-
  • 相关项目：常关型宽禁带氮化镓MOS场效应晶体管的研究
作者： Zhishe Wu|Baijun Zhang|Jinping Ao|Yang Liu|
同期刊论文项目
常关型宽禁带氮化镓MOS场效应晶体管的研究
期刊论文 31 专利 7
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