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The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor
  • ISSN号：0361-5235
  • 期刊名称：Journal of Electronic Materials
  • 时间：2012
  • 页码：466-470
  • 相关项目：Si衬底上InGaP/GaAs/Ge和InGaP/GaAs/SiSnGe/Ge多结太阳能电池材料生长与器件制备研究
作者： Hu Wang|Senlin Li|Hui Xiong|Zhihao Wu|Jiangnan Dai|Yu Tian|Yanyan Fang|Changqing Chen|
同期刊论文项目
Si衬底上InGaP/GaAs/Ge和InGaP/GaAs/SiSnGe/Ge多结太阳能电池材料生长与器件制备研究
期刊论文 11 专利 7
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