中文摘要：

采用气态源分子束外延设备生长了GaAs/AlGaAs束缚态到连续态跃迁结构的太赫兹（THz）量子级联激光器（QCL）有源区结构,研究了半绝缘等离子体波导THzQCL的器件工艺,采用远红外傅里叶变换光谱仪以及探测器测量了器件的电光特性.器件激射频率为3·2THz,10K下的阈值电流密度为275A/cm2.

英文摘要：

The active region of GaAs/AlGaAs bound-to-continuum terahertz quantum-cascade laser （THz QCL） is grown by gas-source molecular beam epitaxy. The device fabrication process of semi-insulating surface-plasmon THz QCL is studied in detail. The electrical and optical characteristics of the fabricated THz QCL device are measured using a far-infrared Fourier transform infrared spectrometer with a deuterated triglycerine sulfate far-infrared detector. At 10 K,the measured lasing frequency is 3.2 THz and the threshold current density is 275 A/cm~2.