中文摘要：

针对NiO薄膜厚度对量子点敏化太阳电池性能的影响,设计了1组对比实验,并首次采用CdTeO_3量子点作为敏化剂敏化NiO光阴极制备p型量子点敏化太阳电池。通过分析发现当丝网印刷层数为2层,NiO薄膜厚度大约为2.5μm时,光阴极的吸收强度和电池的短路电流密度都有较大的提升。最终电池获得了0.018%的光电转换效率,达到了国际文献报道的同等水平,拓宽了p型量子点敏化太阳电池的研究范围。

英文摘要：

A group of comparative experiments are designed for researching the influence of NiO thin film thickness on the performance of quantum dot sensitized solar cell. CdTeO3 quantum dots are used as sensitizer for p-type quantum dot sensitized solar cell for the first time. The analysis shows that when there are two layers of sereen printing and when the thickness of NiO thin film is approximately 2.5 μm, the absorption of photoeathode and the short-circuit current density of solar cell have greatly improved. Finally, the photoelectric conversion efficiency reported in international literature, broadening of 0. 018% is achieved. This result reaches the same level the study of p-type quantum dot sensitized solar cell.