中文摘要：

这份报纸论述精力的影响的模拟研究在弄翻的一个导致质子的单个事件(SEU ) 上迷一个商业 65-nm 静电干扰随机存取记忆房间的测试。模拟结果显示为低精力质子的 SEU 生气的节显著地在 SEU 测试由于 degraders 的使用被低估。相反，在高精力质子测试使用 degraders 可以引起 SEU 生气的节的 overestimation。结果被试验性的数据和精力的影响证实在当用 degraders 在 nanodevice 进行导致质子的 SEU 测试时，要考虑的 SEU 生气的节需要上迷。

英文摘要：

This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset （SEU） test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders.