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Fabrication of strained Ge film using a thin SiGe virtual substrate
  • 时间：0
  • 分类：TN304.26[电子电信—物理电子学] TP391.9[自动化与计算机技术—计算机应用技术;自动化与计算机技术—计算机科学与技术]
  • 作者机构：[1]Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Nos. 60636010, 60820106001 ）.
  • 相关项目：适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
关键词： 超高真空化学气相沉积, 虚拟, 硅锗, 衬底, UHVCVD, 表面粗糙度, 超薄, 制备, strained Ge, SiGe virtual substrate, RPCVD, UHVCVD
中文摘要：

Corresponding author. Email： wang_j @tsinghua.edu.cn

同期刊论文项目
适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
期刊论文 36 会议论文 5
SiGe应变沟道功率MOSFET器件研究
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