中文摘要：

运用动力学蒙特卡罗（KMC）方法对金属有机化学气相沉积（MOCVD）生长GaInP薄膜过程进行了模拟;将模拟的结果与虚拟现实（VR）系统开发的软件开发包Open Inventor接口,实现了MOCVD反应室内GaInP薄膜生长过程的可视化仿真。模拟仿真结果准确直观地展示了MOCVD反应室内GaInP薄膜生长的过程,揭示了扩散时间和衬底温度对GaInP薄膜形貌的影响规律;可视化结果为优化MOCVD生长GaInP薄膜的工艺参数提供理论依据。

英文摘要：

Methods of Kinetic Monte Carlo（KMC） was applied to simulation of the process of GaInP thin film grown by metal organic chemical vapor deposition（MOCVD）.The results of simulation were used to access to development package Open Inventor developed by virtual reality（VR） system.The visualization emulation of the process of GaInP thin film growth in MOCVD reactor was realized.The results of simulation and visualization truly and intuitively display process of GaInP thin film growth in MOCVD reactor,and they reveal the rule of influence of diffusion time and substrate temperature on GaInP thin film morphology.The visualization results provide the optimizations of processing parameters which grow GaInP thin film by MOCVD with theoretical basis.