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Enhancement-mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2 plasma im
  • 期刊名称：Physica Status Solidi A
  • 时间：2014.10
  • 页码：1081-1085
  • 相关项目：氮化镓基浮空复合场板功率器件研究
作者： Yonghe Chen|Jincheng Zhang|Xiaohua Ma|Yue Hao|
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氮化镓基浮空复合场板功率器件研究
期刊论文 10
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