中文摘要：

随着器件沟道尺寸的不断缩小,短沟道效应（SCE）和漏致势垒降低效应（DIBL）对常规类MOSFET结构的石墨烯纳米条带场效应管（GNRFET）影响变大,从而引起器件性能下降。文中提出了一种新型采用非对称HALO-LDD掺杂结构的GNRFET,其能够有效抑制器件中SCE和DIBL,改善器件性能。并采用一种量子力学模型研究GNRFET的电学特性,该模型基于二维NEGF（非平衡格林函数）方程和Poisson方程自洽全量子数值解。结合器件的工作原理,研究了GNRFET的电学特性和器件结构尺寸效应,通过与采用其他掺杂结构的GNRFET的电学特性对比分析,发现这种掺杂结构的石墨烯纳米条带场效应管具有更低的泄漏电流、更低的亚阈值斜率和DIBL以

英文摘要：

The nanoscale conventional MOSFET-like graphene nanoribbon field-effect transistors（GNRFET） suffer from the excessive degradation of the device performance due to the short-channel effect（SCE） and DIBL effects with the decreases of channel length.In this paper,a novel structure of GNRFET with non-symmetrical HALO-LDD doping profile near the source and drain contacts has been proposed,which can efficiently suppress the SCE and DIBL.A quantum kinetic model based on two dimensional（2D） non-equilibrium Green′s functions（NEGF） solved self-consistently with Poisson′s equations is developed to investigate the device behavior of GNRFETs.Combined with the device working principle,the influence of device dimensions on current characteristics has been studied.Comparisons are made for electrical properties among the GNRFETs with different doping structures.It is shown that,compared with the other structure,the proposed asymmetrical HALO-LDD doping structure can significantly improve the performance of GNRFET in many aspects,such as decreasing leakage current,sub-threshold slope and DIBL,and increasing on-off current ratios,which indicate that our device is better to satisfy the performance requirement of ITRS（International thechnology roadmap for semiconducter）.