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Influence of strain on hydrogenic impurity states in a GaN/ Al_xGa_(1-x)N quantum dot
  • ISSN号:1673-1905
  • 期刊名称:《光电子快报:英文版》
  • 时间:0
  • 分类:O471.1[理学—半导体物理;理学—物理]
  • 作者机构:[1]Department of Physics Inner Mongolia University Hohhot China Colleges of Sciences Inner Mongolia Agricultural University
  • 相关基金:supported by the National Natural ScienceFoundation of China (No. 10564003);; the Key Project of theScience and Technology Research of the Educational Ministry ofChina (No. 208025)
中文摘要:

Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum dot, including the strong built- in electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the bin...

英文摘要:

Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum dot, including the strong built- in electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the bin...

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期刊信息
  • 《光电子快报:英文版》
  • 主管单位:
  • 主办单位:天津理工大学
  • 主编:巴恩旭
  • 地址:天津市西青区宾水西道391号
  • 邮编:300384
  • 邮箱:Oelett@yahoo.com.cn
  • 电话:022-23679707 23657134
  • 国际标准刊号:ISSN:1673-1905
  • 国内统一刊号:ISSN:12-1370/TN
  • 邮发代号:6-198
  • 获奖情况:
  • 中国期刊方阵“双效”期刊
  • 国内外数据库收录:
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  • 被引量:147