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中文摘要：
采用电子束物理气相沉积（EB-PVD）制备3Gd2O3—3Yb2O3-4Y2O3（摩尔分数，％）共掺杂的二氧化锆（GY-YSZ）基热障涂层（TBCs）。采用交流阻抗谱（IS）并结合扫描电子显微镜（SEM）、拉曼光谱和X射线衍射分析仪（XRD），研究GY-YSZ涂层在1050℃的高温氧化行为。交流阻抗谱中不同的电学信号分别反映GY-YSZ晶粒和晶界的信息，采用电路拟合的方法对其进行分析。在氧化过程中GY-YSZ的导电机制发生变化，原因是稳定剂在氧化过程中发生扩散导致了O^2-空位和晶格畸变的产生。研究发现，应该选择合适的测试温度评价GY-YSZ晶粒或晶界的氧化行为，其各自的氧化信息与交流阻抗谱中阻抗值的变化相对应。测试氧化过程中晶粒和晶界阻抗值变化的温度分别为200℃和300℃。
英文摘要：
3Gd2O3-3Yb2O3-4Y2O3 （mole fraction, %） co-doped ZrO2 （GY-YSZ） thermal barrier coatings （TBCs） were produced by electron beam physical vapor deposition （EB-PVD）. The oxidation behavior of GY-YSZ at 1 050 ℃ was investigated using impedance spectroscopy （IS） combined with scanning electron microscopy （SEM）, Raman spectroscopy and X-ray diffractometry （XRD）. Various electrical responses observed in the impedance spectra corresponding to GY-YSZ grains and grain boundaries were explained using circuit modeling. The change in the conduction mechanism of GY-YSZ was found to be related to the O^2- vacancy and lattice distortion due to the stabilizer diffusion during the oxidation. The results also suggested that the specific oxidation information about the GY-YSZ grains and grain boundaries should be acquired at a moderate measurement temperature, which was related to the resistance value in the impedance spectra. The resistance values of the GY-YSZ grains and grain boundaries should be measured at 200 ℃ and 300 ℃, respectively.
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