中文摘要：

采用简单热蒸发法使硅蒸气和碳纳米管反应生成了碳化硅纳米线．反应产物首先经X射线衍射（XRD）确定为3C—SiC．再用场发射扫描电镜（FESEM）和高分辨透射电镜（HRTEM）等进行形貌和结构研究，发现3C—SiC纳米线部分呈直线六棱柱形状，大多为3C—SiC单晶，其[111]方向与纳米线长度方向一致，间或有折线，弯曲和螺旋形．在这些结果的基础上，提出3C—SiC纳米线形核生长的气液固（VLS）机制：硅蒸气（V）溶于碳纳米管端部残留金属催化剂液滴（L），与碳纳米管反应（S），生成3C-SiC晶核并沿碳纳米管长度方向生长．

英文摘要：

SiC nanowires were synthesized via the reaction between silicon vapor and carbon nanotubes by a simple heating and evaporation method. The product was identified as 3C-SiC by X-ray diffraction （XRD）, and the morphology and microstructure of the nanowires were characterized by field-emission scanning electron microscopy （FESEM） and high resolution transmission electron microscopy （HRTEM）. The greater part of the nanowires are 3C-SiC single crystalline prisms with hexagonal cross section, whose [111] direction is the length direction of the nanowires while a few of them are folded, curved, or helical. The nucleation and growth of the 3C-SiC nanowires follows the special vapor-liquid-solid （VLS） mechanism： silicon vapor （V） dissolves in the residual catalyst metallic droplet （L） at the tip of a carbon nanotube, and then reactes with solid carbon （S） to form SiC nucleus, which then grows along the length of the carbon nanotube.