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中文摘要：
本文采用MBE进行InAs/GaAs与InGaAs/GaAs量子点的生长,利用RHEED进行实时监测,并利用RHEED强度振荡测量生长速率。对生长的InAs/GaAs和InGaAs/GaAs两种量子点生长过程与退火情况进行对比,观察到当RHEED衍射图像由条纹状变为网格斑点时,InAs所需要的时间远小于InGaAs;高温退火下RHEED衍射图像恢复到条纹状所需要的时间InAs比InGaAs要长。
英文摘要：
Investigates the growth of InAs/GaAs and InGaAs/GaAs quantum dots via MBE,with RHEED used for real-time monitoring of film surface morphology and for growth rate measuring through intensity fluctuation.Comparing the growing process of quantum dots and annealing conditions of InAs/GaAs with that of InGaAs/GaAs,it was found that if the RHEED pattern changes to spotty from streaky the changing time required for InAs is far shorter than that for InGaAs.By contrast,if the RHEED pattern changes reversely during high-temperature annealing,the time required for InAs is longer than that for InGaAs.
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