中文摘要：

提出具有浮空埋层的变掺杂高压器件新结构（BVLD：Variation in lateral doping with floating buriedlayer）,建立其击穿电压模型。线性变掺杂漂移区的电场耦合作用使表面电场达到近似理想的均匀分布,n＋浮空等电位层与衬底形成新平行平面结,使得纵向电压由常规结构的一个pn结承受转变为两个串联pn结分担,改善了器件的击穿特性;建立二维的击穿电压模型,获得器件结构参数间的优化关系。结果表明：与常规LDMOS相比,BVLD结构的击穿电压提高94%。

英文摘要：

A novel high voltage device with variation in lateral doping and floating buried layer（BVLD） is proposed,and a model of breakdown voltage is developed.The surface electric field reaches nearly ideal uniform distribution due to electric field modulation of variation in lateral doping.A new parallel-plane junction is formed between n＋floating buried layer and substrate, which can support more biases by series of two pn junctions.Based on the 2-D model of breakdown voltage,the quantified optimal relation between the structure parameters is also obtained.The results indicate that the breakdown voltage of BVLD device is increased by 94% in comparison to conventional LDMOS.