中文摘要：

用离子束溅射和后退火工艺制备了一种适用于微测辐射热探测器热敏材料的新型纳米结构二氧化钒（VO2）薄膜材料,薄膜具有平均粒度8 nm,在半导体相区具有电阻温度系数（TCR）为-7%/K,性能高于传统的VO2材料（平均粒度为1-2μm,在半导体相区具有TCR约为-2%/K）.基于纳米结构的VO2薄膜材料的器件比基于传统的VO2薄膜材料具有更高的性能,而两者的噪声基本相当.

英文摘要：

A new nanostructure VO2 thin film suitable for microbolometer heat-sensitive material was fabricated through reaction-ion sputtering and post-annealing process. An average grain size of 8nm and temperature coefficient of resistance （TCR） of -7%/K in semiconducting phase region is obtained. However, the average grain size for conventional microstructure VO2 is 1-2μm, the TCR is -2%/K in semiconducting phase region. Test shows the responsivity of the sensor based on nanopolycrystal VO2 thin films is higher than that based on microstructure VO2 thin films, and the RMS noise voltage of devices based on micro- and nanostructure VO2 materials are almost equality. Therefore, the nanostructure VO2 is a potential heat-sensitive material for microbolometer.