利用射频磁控溅射方法在蓝宝石衬底上制备了氧化钒薄膜,X射线衍射的测量结果表明薄膜的主要成分是多晶二氧化钒.实现了二氧化钒薄膜半导体-金属相变过程的电阻和五个不同波长下薄膜反射率的同步测量.实验结果表明,电学和光学测量都在相变过程中出现回滞曲线,但是二者的表现形式有明显差别.当用光学方法探测时,同一次相变过程中不同区域的反射率曲线几乎完全重合,证明了薄膜样品的均匀性.
Vanadium oxide thin film was deposited on sapphire by RF magnetron sputtering. The XRD measurement result shows that the thin film is mainly composed of polycrystalline vanadium dioxide. The resistance of the thin film and its optical reflectivity at five different wavelengths were measured simultaneously during the semiconductor-metal phase transition. While both resistance and reflectivity measurements show reproducible hysteresis loops, they have quite dif- ferent appearance. The optical phase transitions of VO2 at different points are almost the same, thus proving that the sam- ple is uniform.