中文摘要：

硅基光电子集成技术（PICs）为高速宽带光互连和光通信的发展提供了一种低成本的有效方案，受到人们的高度重视．目前将Ⅲ-Ⅴ族和锗等半导体化合物集成到硅衬底的方法主要分为两类：异质结外延生长和异质材料的键合．低温下晶片键合的方法克服了异质结外延生长中的生长温度高、晶格失配和材料热膨胀系数非共容性的缺点，为大规模的异质（不同半导体材料）集成提供了可能．文章综述了近几年来一些常用的键合方法，并对低温键合方法的发展动向做了展望．

英文摘要：

Recently, much attention has concentrated on silicon based photonic integrated circuits （PICs）, which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication. To integrate Ⅲ-Ⅴ compounds and germanium semiconductors on silicon substrates, at present there are two kinds of manufacturing methods, i. e. , heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch, and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged.