基于目前石墨烯在忆阻器中应用的最新研究进展,从石墨烯类忆阻器的基本结构出发,评述了石墨、氧化石墨烯、石墨烯在忆阻器中的应用方式,分析了石墨烯类阻变材料的阻变特性、阻变机理及界面势垒调节和电荷陷阱充放电两种模型,最后介绍了目前石墨烯衍生忆阻装置亟待解决的问题和发展方向。
Based on the latest research progress on applications o{ grapher~e in the memristor, starting from the basic structure of the graphite memristor, the graphite, graphene oxide and graphene are reviewed. Resistive switching characteristics and mechanisms of the resistive switching graphene derivatives, and two models (interface barrier regu- lation and charge trap charging-discharging) are analysed. Finally, problems and the direction of development of gra- phene derivative memristor device are commented.