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Influence of thermal annealing on electrical and optical properties of indium tin oxide thin films
ISSN号:1369-8001
期刊名称:Materials Science in Semiconductor Processing
时间:2014.10
页码:588-592
相关项目:多量子阱中无应变AlInGaN四元合金势垒的应变补偿结构制备及发光性质研究
作者:
Chongbin Tan|Lin Zhang|Rong Zhang|Youdou Zheng|
同期刊论文项目
多量子阱中无应变AlInGaN四元合金势垒的应变补偿结构制备及发光性质研究
期刊论文 28
同项目期刊论文
High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence
Characteristics of nanoporous InGaN/GaN multiple quantum wells
Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface
GaN纳米柱的量子效率研究
氢化物气相外延生长的GaN膜中的应力分析
Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells
Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes
Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nan
Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-
Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer
Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using
利用X射线衍射研究Mg掺杂的InN的快速退火特性
GaN纳米柱发光特性
GaN薄膜中的马赛克结构随厚度发生的变化
InN的光致发光特性研究
氢化物气相外延生长高质量GaN膜生长参数优化研究
紫外波段SiO2/Si3N4介质膜分布式布拉格反射镜的制备与研究
GaN nanopillars with a nickel nano-island mask
氢化物气相外延生长GaN膜性质研究
背势垒对InAlN/GaN异质结构中二维电子气的影响
用氢化物气相外延(HVPE)法生长的氮化铟薄膜的性质研究
GaN hexagonal pyramids formed by a photo-assisted chemical etching method
Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask