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中文摘要：
随着大规模集成电路的特征尺寸进入到纳米级，传统的硅基集成电路技术面临挑战，新材料及新结构的研究成为热点，纳电子学分支之一的分子电子器件正在蓬勃发展一场效应晶体管（FET）和交叉结构是目前主要的分子电子器件的结构，而交叉结构有利于集成受到广泛关注。文章概述了基于交叉结构的分子纳米器件工作原理、工艺流程，并着重介绍了逻辑功能的实现方法及其研究进展，最后，总结了交叉结构的前景及所面临的困难。
英文摘要：
As very large integrated circuits reach a critical dimension of a few tens of nanometers, conventional silicon based technology is facing a big challenge, tNew materials and architectures are becoming a hot topic, and much effort is being put into developing molecular electronic devices as a part of nanoelectronics. The current primary architectures of molecular electronic devices are field effect transistors and crossbar switches, and crossbar structures are attracting world - wide attention due to theireasy integration. The principles and processing of molecular electronic devices based on crossbar architecture are; the implementation of logic circuits based on crossbars, and recent progress in this area are described. The prospects and problems of crossbar circuits are also summarized.
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