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Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2013.1.1
  • 页码：1-1
  • 相关项目：新型磁电阻功能材料及其纳米异质结构中的自旋转移力矩效应和应用
作者： D. L. Li, J. F. Feng, G. Q. Yu, P. Guo, J. Y. Che|J. M. D. Coey|
同期刊论文项目
新型磁电阻功能材料及其纳米异质结构中的自旋转移力矩效应和应用
期刊论文 63
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