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退火温度对VO_X薄膜结构及光学性质的影响
  • 期刊名称:光散射学报
  • 时间:0
  • 页码:37-42
  • 语言:中文
  • 分类:O484[理学—固体物理;理学—物理]
  • 作者机构:[1]四川大学物理科学与技术学院,辐射物理及技术教育部重点实验室,成都610064
  • 相关基金:国家自然科学基金(10475058,10875038)
  • 相关项目:低剂量辐照响应复合材料辐射变色膜变色机理研究
中文摘要:

以高纯五氧化二钒(V2O5)粉末(纯度≥99.99%,质量百分比)为原料,采用真空蒸发——还原工艺,在不同退火温度下还原出不同组分的VOx薄膜。利用X射线衍射仪,X射线光电子能谱仪和紫外-可见分光光度计对薄膜进行测试和分析,得到了不同退火温度与薄膜结构和其光学特性的关系。结果显示:V2O5中的V^5+随着退火温度的上升被还原,退火温度为450℃时,V^4+含量最高,结晶最好,500℃时,薄膜组分表现出逆退火现象,温度进一步升高,钒再次被还原。

英文摘要:

The V2O5 thin films were deposited by vacuum-evaporation technology from the V2O5 powder(purity≥99.99%,in mass). The V2O5 thin films were annealed at different temperature in the vacuum coating machine. Then the VOx thin films were gained. The thin films were measured by XRD, XPS and ultraviolet-visible spectrophotometer. The relationship between annealing temperature and structure and optical properties was obtained. V^5+ was deoxidized with the annealing temperature rising. At 450℃, the content of V^4+ was highest and crystallization was best. At 500℃, substrate diffusion became serious. The composition of the VOx thin films show counter annealing phenomenon. When the temperature further elevated V was deoxidized again.

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