中文摘要：

用脉冲激光二极管阵列（LDA）作为泵浦源、微柱透镜阵列和透镜导管作为耦合系统，以As^＋注入GaAs可饱和吸收片作为被动调Q锁模元件，实现了Nd：YVO1，激光器调Q锁模运转,调Q运转阶段，激光器每泵浦脉宽内输出一个调Q脉冲，调Q脉宽7ns．调Q锁模运转阶段，初始透过率60％的GaAs晶片对调Q包络内的锁模脉j中的调制深度达到95%以上,锁模脉冲重复频率991MHz．研究了加在LDA上的电压、方波脉冲的脉宽和重复频率对调Q锁模脉冲特性的影响，并对实验结果进行了讨论．

英文摘要：

A passively Q-switched pulse-LDA （laser diode array ）-pumped Nd ： YVO4 laser using As^＋ implanted GaAs as a saturable absorber is demonstrated. In the Qswitching experiment, the laser produces one Qswitching pulse in every pumping pulse duration and a Q-switching pulse width 7 ns is achieved which,to our knowledge, is the shortest pulse width in a passively Q-switched Nd ： YVO4 laser using GaAs as saturable absorber. In the Q-switching mode locking experiment, using a 60% initial transmission GaAs wafer,the modulation depth of larger than 95% and the repetition rate of 991 MHz of the mode locked pulses in the Q-switched envelope are obtained. The characteristics of the Q-switched mode locked pulses by varying the pumping pulse amplitude, pulse width and repetition rate are investigated respectively. The experimental results are discussed as well.