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中文摘要：
结构的进化和 hydrogenated 硅的光描述( Si : H )频率( RF )血浆提高了的常规无线电获得的薄电影通过 silane 的分解的化学蒸汽免职( PECVD )与氩冲淡了被X光检查 diffractometry ( XRD )学习， Fourier 变换红外线( FTIR )光谱学，拉曼光谱学，传播电子显微镜学( TEM )，并且紫外、可见(紫外力)光谱学分别地。薄电影的光性质上的氩冲淡的影响也被学习。当冲淡气体在 Si 在 nano 水晶谷物和非结晶的网络的生长起一个重要作用，它被发现那氩: H 薄电影。有不同的氩冲淡比率的薄电影的结构的进化被观察，氩血浆在免职过程期间在薄电影导致 nanocrystallization，这被建议。在相对低的冲淡比率开始的 nanocrystallization 也被观察。随在混合先锋气体的氩部分的增加，在薄电影的 nano 水晶谷物定期演变。结构的进化被一个建议模型基于在与 Ar 组成的氩血浆之间的精力交换解释 * 并且 Ar+ 激进分子和薄电影的生长区域。它被观察那两个有冲淡比率的增加的紫外力的光和光差距减少的吸收。
英文摘要：
The structural evolution and optical characterization of hydrogenated silicon （Si：H） thin films obtained by conventional radio frequency （RF） plasma enhanced chemical vapor deposition （PECVD） through decomposition of silane diluted with argon were studied by X-ray diffractometry （XRD）, Fourier transform infrared （FTIR） spectroscopy, Raman spectroscopy, transmission electron microscopy （TEM）, and ultraviolet and visible （UV-vis） spectroscopy, respectively. The influence of argon dilution on the optical properties of the thin films was also studied. It is found that argon as dilution gas plays a significant role in the growth of nano-crystal grains and amorphous network in Si：H thin films. The structural evolution of the thin films with different argon dilution ratios is observed and it is suggested that argon plasma leads to the nanocrystallization in the thin films during the deposition process. The nanocrystallization initiating at a relatively low dilution ratio is also observed. With the increase of argon portion in the mixed precursor gases, nano-crystal grains in the thin films evolve regularly. The structural evolution is explained by a proposed model based on the energy exchange between the argon plasma constituted with Ar and Ar^＋ radicals and the growth regions of the thin films. It is observed that both the absorption of UV-vis light and the optical gap decrease with the increase of dilution ratio.
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