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Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask

ISSN号：1674-1056
期刊名称：《中国物理B：英文版》
时间：0
分类：O484[理学—固体物理;理学—物理] TP311.52[自动化与计算机技术—计算机软件与理论;自动化与计算机技术—计算机科学与技术]
作者机构：[1]National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093, China, [2]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China, [3]Ecomaterials and Renewable Energy Research Center (ERERC), Department of Physics, Nanjing University, Nanjing 210093, China
相关基金：Project supported by the Special Funds for Major State Basic Research Project of China （Grant Nos. 2011CB301900, 2012CB619304, and 2010CB327504）, the Hi-tech Research Project of China （Grant No. 2011AA03A103）, the National Nature Science Foundation of China （Grant Nos. 60990311, 61274003, 60936004, and 61176063）, the Program for New Century Excellent Talents in University of China （Grant No. NCET-11-0229）, the Natural Science Foundation of Jiangsu Province of China （Grant No. BK2011010）, the Funds of Key Laboratory of China （Grant No. 9140C140102120C14）, and the Research Funds from NJU-Yangzhou Institute of Opto-electronics of China.

作者：陶涛[1,2], 智婷[1,2], 李民雪[2,3], 谢自力[1,2], 张荣[1,2], 刘斌[1,2], 李毅[1,2], 庄喆[1,2], 张国刚[1,2], 蒋府龙[1,2], 陈鹏[1,2], 郑有炓[1,2]

关键词：生成效率, 糙化处理, 纳米尺寸, 太阳能, INGAN, 表面, 掩模, 光电极, photoelectrolysis, InGaN photoelectrode, surface roughening, hydrogen generation

中文摘要：

A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching(ICP) surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of photocurrent is demonstrated in comparison with a planar one fabricated from the same parent wafer. Under identical illumination conditions in HBr solution, the incident photon conversion efficiency(IPCE) shows an enhancement with a factor of 3, which even exceed 54% at 400 nm wavelength. We believe the enhancement is attributed to several facts including improvement in absorption, reacting area, carrier localization and carrier lifetime.

英文摘要：

A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching （ICP） surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of photocurrent is demonstrated in comparison with a planar one fabricated from the same parent wafer. Under identical illumination conditions in HBr solution, the incident photon conversion efficiency （IPCE） shows an enhancement with a factor of 3, which even exceed 54% at 400 nm wavelength. We believe the enhancement is attributed to several facts including improvement in absorption, reacting area, carder localization and carrier lifetime.

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