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采用高分辨XRD对m面GaN位错特性的研究
  • ISSN号：1003-353X
  • 期刊名称：《半导体技术》
  • 时间：0
  • 分类：TN304.055[电子电信—物理电子学]
  • 作者机构：[1]南京大学江苏省光电信息功能材料重点实验室
  • 相关基金：国家“973”重点基础研究项目(2006CB6049);国家“863”高技术研究发展计划(2006AA03A103,2006AA03A118,2006AA03Z411);国家自然科学基金(60721063,60676057,60731160628);江苏省创新学者攀登项目(BK2008019)
作者： 宋黎红[1], 谢自力[1], 张荣[1], 刘斌[1], 李弋[1], 傅德颐[1], 张曾[1], 崔影超[1], 修向前[1], 韩平[1], 施毅[1], 郑有炓[1]
关键词： GAN, 位错, X射线衍射, 有机化学气相淀积, 各向异性
中文摘要：

利用高分辨X射线衍射方法,分析了在LiAlO2(100)面上采用金属有机化学气相沉积生长的m面GaN薄膜的微观结构和位错。采用对称面扫描和非对称面扫描等方法研究了晶面倾转角、面内扭转角、横向和垂直关联长度等,由此得到螺位错和刃位错密度。考虑到m面GaN的各向异性,将〈0001〉晶向定义为0°方向,与之垂直的方向为90°方向,分别按0°和90°两个不同方向进行X射线衍射的研究。0°方向和90°方向螺位错密度分别为1.97×1010、7.193×109cm-2,0°方向螺位错密度较大;0°和90°方向刃位错密度分别为3.23999×1010、7.35068×1010cm-2,90°方向刃位错密度较大,显示了非极性GaN薄膜各向异性的特征。

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期刊信息
  • 《半导体技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:中国电子科技集团公司第十三研究所
  • 主编：赵小玲
  • 地址：石家庄179信箱46分箱
  • 邮编：050051
  • 邮箱：informax@heinfo.net
  • 电话：0311-87091339
  • 国际标准刊号：ISSN：1003-353X
  • 国内统一刊号：ISSN：13-1109/TN
  • 邮发代号:18-65
  • 获奖情况:
  • 中文核心期刊,中国科技论文统计用刊
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  • 被引量:6070