中文摘要：

By using the linear combination of bulk band (LCBB) method incorporated with the top of the barrier splitting (TBS) model,we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate (DG) metal-oxide-semiconductor field-effect transistors (MOSFETs).A critical body thickness value of 5 nm is found,below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures.It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length.Different from the previous simulation results,it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness (2.0 nm and below) by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness.

英文摘要：

By using the linear combination of bulk band （LCBB） method incorporated with the top of the barrier splitting （TBS） model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate （DG） metal-oxide semiconductor field-effect transistors （MOSFETs）. A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness （2.0 nm and below） by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness.