中文摘要：

提出一种新型超低漏电ESD电源钳位电路。该电路采用具有反馈回路的ESD瞬态检测电路，能够减小MOS电容栅极—衬底之间电压差，降低电路的泄漏电流，抑制ESD泄放器件的亚阈值电流。65nm CMOS工艺仿真结果表明，在电路正常上电时，泄漏电流只有24．13 nA，比传统ESD电源钳位电路的5．42μA降低两个数量级。

英文摘要：

A novel electrostatic discharge （ESD） power clamp circuit with ultra-low leakage current is proposed. An ESD transient detective circuit with feedback loop is used to reduce the voltage between the bulk and gate of MOS capacitor, which results in a ultra-low leakage current performance of novel circuit. Verified by HSPICE simulation in 65 nm CMOS process, the standby leakage current of novel circuit is 24.13 hA, which is more than two-orders lower than that of the traditional design about 5.42 μA.