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Bi1-xLaxFeO3±δ薄膜的快速制备及铁电性
  • ISSN号:1000-3290
  • 期刊名称:《物理学报》
  • 时间:0
  • 分类:TQ131.22[化学工程—无机化工]
  • 作者机构:[1]天津师范大学物理与材料科学学院,天津300387, [2]中国科学院物理研究所,北京凝聚态国家实验室,北京100190, [3]北京信息科技大学,传感器技术研究中心,北京100101
  • 相关基金:国家自然科学基金(批准号:11474338,51001081)资助的课题
中文摘要:

样品的制备是对影响样品质量的各个工艺参数进行优化的过程.传统的试错法是对各个参数逐个进行尝试,需要的周期较长.与传统的单参数尝试法相比,高通量样品制备方法可以对参数实现并行筛选,因而极大地缩短了优化工艺所需的时间.本工作借助高通量制备方法成功实现系列镧掺杂BiFeO3薄膜的快速优化,包括对烧结温度、镧元素含量和高温固态反应气氛等关键工艺参数的快速筛选,同时分析了不同生长条件下样品的结构并测试了其铁电性.实验结果表明:1)560℃烧结可得到单相薄膜;2)测量不同La含量样品的铁电性,发现当E=75 kV/cm时,La=15%的样品剩余极化值(2Pr)最大,约为26.7μC/cm^2;3)在纯氧气氛下烧结有助于得到结晶性更好的单相Bi0.75La0.25FeO3±δ薄膜,并且能够提高薄膜的铁电性.

英文摘要:

Multiferroic materials exhibiting the features of ferroelectricity,ferromagnetism and even ferroelasticity simultaneously have attracted much attention because of their vast potential applications in multifunctional devices as well as their interesting physical connotations.BiFeO3(BFO) is the multiferroic material most studied because it has only single phase of multiferroic oxide with giant remanent polarization above room temperature.Although BFO has many excellent advantages,the large leakage current is a chief obstacle for its practical application in some devices.As is well known,the leakage current of BFO is due to the valence transformation from Fe^3+ to Fe^2+ which results in the oxygen vacancy defect and low ferroelectric properties.Some experiments have confirmed that substituting some cations at A site(Bi)or B site(Fe) can improve the multiferroic property of BFO.In addition,we can reduce the leakage current by increasing the oxygen pressure to compensate for the vacancy defect during annealing.In the present work,we employ the sol-gel method which has been widely used in industries to prepare lanthanum doped BFO thin films(La = 0,5%,10%,15%,20%and 25%)(BLFO) and Bi0.75La0.25FeO3±δ thin films separately in air and pure oxygen annealing atmosphere.And we are to achieve the optimal ferroelectric properties of BFO thin films.The traditional trial-and-error method which is used to check the value of a certain parameter one by one always takes rather long time.The high throughput methodology can screen the parameters simultaneously,which greatly reduces the optimizing time.Employing the high throughput methodology,we successfully realize a faster optimizing process to achieve the strongest ferroelectric property in La-doping BFO thin film.We analyze the structures and the ferroelectric properties of the samples grown in different conditions,such as the annealing temperature,the concentration of La-doping and the annealing atmosphere,etc.Results are as follows.1) The optimal annea

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期刊信息
  • 《物理学报》
  • 北大核心期刊(2011版)
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京603信箱(中国科学院物理研究所)
  • 邮编:100190
  • 邮箱:apsoffice@iphy.ac.cn
  • 电话:010-82649026
  • 国际标准刊号:ISSN:1000-3290
  • 国内统一刊号:ISSN:11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876